kst92/kst93 ? pnp epitax ial silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com kst92/kst93 rev. c1 1 september 2009 kst92/kst93 pnp epitaxial silicon transistor features ? high voltage transistor ? high current, wide soa absolute maximum ratings t a =25 c unless otherwise noted thermal characteristics * note) minimum land pattern size. symbol parameter value units v cbo collector base voltage : kst92 : kst93 -300 -200 v v v ceo collector-emitter voltage : kst92 : kst93 -300 -200 v v v ebo emitter-base voltage -5 v i c collector current -500 ma t j, t stg junction and storage temperature 150 c symbol parameter value units p d power dissipation (t a =25 c) 250 mw r ja * thermal resistance, junction to ambient 500 c/w 1. base 2. emitter 3. collector sot-23 1 2 3
kst92/kst93 ? pnp epitax ial silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com kst92/kst93 rev. c1 2 electrical characteristics t a =25 c unless otherwise noted * pulse test: pw 300 s, duty cycle 2% marking code symbol parameter test condition min. max. units bv cbo collector-base breakdown voltage : kst92 : kst93 i c = -100 a, i e =0 -300 -200 v v bv ceo * collector-emitter breakdown voltage : kst92 : kst93 i c = -1ma, i b =0 -300 -200 v v bv ebo emitter-base breakdown voltage i e = -100 a, i c =0 -5 v i cbo collector cut-off current : kst92 : kst93 v cb = -200v, i e =0 v cb = -160v, i e =0 -0.25 -0.25 a a i ebo emitter cut-off current v eb = -5v, i c =0 -0.1 a h fe * dc current gain v ce = -10v, i c = -1ma v ce = -10v, i c = -10ma v ce = -10v, i c = -30ma 25 40 25 v ce (sat) * collector-emitter saturation voltage i c = -20ma, i b = -2ma -0.5 v v be (sat) * base-emitter saturation voltage i c = -20ma, i b = -2ma -0.9 v c ob output capacitance : kst92 : kst93 v cb = -20v, i e =0 f=1mhz 6 8 pf pf f t current gain bandwidth product v ce = -20v, i c = -10ma f=100mhz 50 mhz type kst92 kst93 mark 2d 2e 2d marking
kst92/kst93 ? pnp epitax ial silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com kst92/kst93 rev. c1 3 typical performance characteristics figure 1. dc current gain figure 2. saturation voltage figure 3. capacitance figure 4. current gain bandwidth product figure 5. active-regio safe operating area -1 -10 -100 -1000 1 10 100 1000 v ce = -10v h fe , dc current gain i c [ma], collector current -1 -10 -100 -1000 -10 -100 -1000 -10000 i c = 10 i b v ce (sat) v be (sat) v be (sat), v ce (sat)[mv], saturation voltage i c [ma], collector current -0.1 -1 -10 -100 1 10 100 c ib c ob c ib [pf], c ob [pf], capacitance v cb [v], collector-base voltage -1 -10 -100 10 100 1000 v ce = -20v f = 100mhz f t [mhz], current gain bandwidth product i c [ma], collector current 0.1 1 10 100 0.1 1 10 100 1000 fbsoa kst93 kst92 dc i c [ma], collector current v ce [v], collector-emitter voltage
kst92/kst93 ? pnp epitax ial silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com kst92/kst93 rev. c1 4 physical dimension 0.96~1.14 0.12 0.03~0.1 0 0.38 re f 0.40 0.03 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508ref 0.97ref 1.30 0.10 0.45~0.60 2.40 0.10 +0.05 ?.02 3 0.20 mi n 0.40 0.03 sot-23 dimensions in millimeters
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